Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 0.25 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 30 @5mA, 5V |
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Technical parameters/rated power (Max): | 250 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-883 |
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Dimensions/Height: | 0.47 mm |
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Dimensions/Packaging: | SOT-883 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 类似代替 | 3 |
NPN电阻配备晶体管; R1 = 10千欧, R2 = 10千欧 NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm
|
||
PDTC114EM,315
|
NXP | 类似代替 | SOT-883 |
PDTC114E 系列 50 V 100 mA NPN 配备电阻 晶体管 - DFN1006-3
|
||
PDTC114EM,315
|
Nexperia | 类似代替 | SOT-883 |
PDTC114E 系列 50 V 100 mA NPN 配备电阻 晶体管 - DFN1006-3
|
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