Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-666 |
|
Dimensions/Packaging: | SOT-666 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PEMB10,115
|
NXP | 功能相似 | SOT-666-6 |
晶体管 双极预偏置/数字, BRT, 双路 PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
|
||
PEMB11
|
Philips | 功能相似 |
Small Signal Bipolar Transistor
|
|||
|
|
NXP | 功能相似 | SOT-666 |
Small Signal Bipolar Transistor
|
||
PEMB20
|
Nexperia | 功能相似 |
Small Signal Bipolar Transistor
|
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