Technical parameters/polarity: | NPN+PNP |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 60 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-563 |
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Dimensions/Length: | 1.7 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.6 mm |
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Dimensions/Packaging: | SOT-563 |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSBC124EPDXV6T1G
|
ON Semiconductor | 功能相似 | SOT-563-6 |
双偏置电阻晶体管 Dual Bias Resistor Transistors
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NXP | 类似代替 | SOT-163 |
PIMD2 NPN+PNP带阻尼三极管 50V 0.1A R1=R2=22KΩ SOT163 代码 M5
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