Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/minimum current amplification factor (hFE): | 60 @5mA, 5V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-666 |
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Dimensions/Length: | 1.7 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.6 mm |
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Dimensions/Packaging: | SOT-666 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
NXP | 类似代替 | SOT-666 |
NPN / PNP电阻配备晶体管R1 = 22千瓦, R2 = 47千瓦 NPN/PNP resistor-equipped transistors R1 = 22 kW, R2 = 47 kW
|
||
PEMD2,115
|
Nexperia | 功能相似 | SOT-666 |
NXP PEMD2,115 单晶体管 双极, BRT, NPN, PNP, 50 V, 300 mW, 100 mA, 60 hFE
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