Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-563 |
|
Dimensions/Packaging: | SOT-563 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSBA114EDXV6T1G
|
ON Semiconductor | 类似代替 | SOT-563-6 |
双PNP偏置电阻晶体管 Dual PNP Bias Resistor Transistors
|
||
NSBA123JDP6T5G
|
ON Semiconductor | 类似代替 | SOT-963 |
双数字晶体管( BRT ) Dual Digital Transistors (BRT)
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review