Technical parameters/rated power: | 75 W |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 75 W |
|
Technical parameters/breakdown voltage (collector emitter): | 400 V |
|
Technical parameters/Maximum allowable collector current: | 4A |
|
Technical parameters/minimum current amplification factor (hFE): | 10 @2A, 5V |
|
Technical parameters/rated power (Max): | 75 W |
|
Technical parameters/DC current gain (hFE): | 10 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 75000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Packaging: | TO-220-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Rail |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
We En Semiconductor | 功能相似 | TO-220 |
NXP ### 双极性晶体管,NXP Semiconductors
|
||
PHD13005,127
|
We En Semiconductor | 完全替代 | TO-220-3 |
TO-220AB NPN 400V 4A
|
||
PHD13005,127
|
NXP | 完全替代 | TO-220-3 |
TO-220AB NPN 400V 4A
|
||
|
|
Rochester | 功能相似 | TO-220 |
达林顿晶体管 NPN Epitaxial Sil Darl
|
||
TIP142TTU
|
Freescale | 功能相似 | TO-220 |
达林顿晶体管 NPN Epitaxial Sil Darl
|
||
TIP142TTU
|
Fairchild | 功能相似 | TO-220-3 |
达林顿晶体管 NPN Epitaxial Sil Darl
|
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