Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 400 V |
|
Technical parameters/Maximum allowable collector current: | 1.5A |
|
Technical parameters/minimum current amplification factor (hFE): | 5 @1A, 2V |
|
Technical parameters/rated power (Max): | 1.5 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-92-3 |
|
Dimensions/Packaging: | TO-92-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PHD13003C,412
|
NXP | 功能相似 | TO-226-3 |
双极晶体管 - 双极结型晶体管(BJT) Single NPN 1.5A 2.1W
|
||
PHD13003C,412
|
We En Semiconductor | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) Single NPN 1.5A 2.1W
|
||
STBV32
|
ST Microelectronics | 类似代替 | TO-92 |
高压快速开关NPN功率晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
||
STBV32-AP
|
ST Microelectronics | 类似代替 | TO-226-3 |
高压快速开关NPN功率晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review