Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 200W (Tc) |
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Technical parameters/drain source voltage (Vds): | 55 V |
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Technical parameters/Continuous drain current (Ids): | 75A |
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Technical parameters/Input capacitance (Ciss): | 4352pF @25V(Vds) |
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Technical parameters/rated power (Max): | 200 W |
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Technical parameters/dissipated power (Max): | 200W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75339P3
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR HUF75339P3 晶体管, MOSFET, N沟道, 75 A, 55 V, 12 mohm, 10 V, 4 V
|
|||
HUF75339P3
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HUF75339P3 晶体管, MOSFET, N沟道, 75 A, 55 V, 12 mohm, 10 V, 4 V
|
||
HUF75339P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HUF75339P3 晶体管, MOSFET, N沟道, 75 A, 55 V, 12 mohm, 10 V, 4 V
|
||
|
|
NXP | 功能相似 | SOT-78 |
N沟道增强模式音响场效晶体管 N-channel enhancement mode field-effect transistor
|
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