Technical parameters/number of channels: | 2 |
|
Technical parameters/drain source resistance: | 250 mΩ |
|
Technical parameters/dissipated power: | 2 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30 V |
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Technical parameters/Input capacitance (Ciss): | 250pF @20V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 65 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.45 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PHP225
|
NXP | 功能相似 | SOP-8 |
Dual P-channel enhancement mode MOS transistor
|
||
PHP225
|
Philips | 功能相似 |
Dual P-channel enhancement mode MOS transistor
|
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