Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 90 mΩ |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 300 W |
|
Technical parameters/drain source voltage (Vds): | 75 V |
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Technical parameters/Leakage source breakdown voltage: | 75 V |
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Technical parameters/Continuous drain current (Ids): | 75A |
|
Technical parameters/rise time: | 56 ns |
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Technical parameters/Input capacitance (Ciss): | 5585pF @25V(Vds) |
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Technical parameters/rated power (Max): | 300 W |
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Technical parameters/descent time: | 48 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.3 mm |
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Dimensions/Width: | 4.7 mm |
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Dimensions/Height: | 9.4 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Rail |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AOT430
|
Alpha & Omega Semiconductor | 功能相似 | TO-220-3 |
TO-220 N-CH 75V 80A
|
||
FDP032N08
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP032N08 晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0025 ohm, 10 V, 3.5 V
|
||
STP75NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
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