Technical parameters/tolerances: | ±2 % |
|
Technical parameters/forward voltage: | 1.1V @200mA |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/test current: | 3.2 mA |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | DO-35-2 |
|
Dimensions/Length: | 3.9 mm |
|
Dimensions/Width: | 1.7 mm |
|
Dimensions/Height: | 1.7 mm |
|
Dimensions/Packaging: | DO-35-2 |
|
Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Ammo Pack |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5259C
|
Central Semiconductor | 功能相似 | DO-35 |
SILICON ZENER DIODE 2.4 VOLTS THRU 200 VOLTS 0.5W(1/2W), 5% TOLERANCE
|
||
1N5259C-TP
|
Micro Commercial Components | 功能相似 | DO-35 |
DO-35 39V 0.5W(1/2W)
|
||
1N5259C-TR
|
Vishay Semiconductor | 完全替代 | DO-35-2 |
稳压二极管 RECOMMENDED ALT 78-1N5259B
|
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