Technical parameters/output current: | ≤20.0 mA |
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Technical parameters/wavelength: | 800 nm |
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Technical parameters/perspective: | 70° |
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Technical parameters/peak wavelength: | 800 nm |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 75 mW |
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Technical parameters/power consumption: | 75 mW |
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Technical parameters/rise time: | 3.00 µs |
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Technical parameters/breakdown voltage (collector emitter): | 35 V |
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Technical parameters/rated power (Max): | 75 mW |
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Technical parameters/descent time: | 3.5 µs |
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Technical parameters/descent time (Max): | 3500 ns |
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Technical parameters/rise time (Max): | 3000 ns |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -25 ℃ |
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Technical parameters/dissipated power (Max): | 75 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | Radial |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 2.95 mm |
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Dimensions/Height: | 4 mm |
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Dimensions/Foot Length: | 17.5 mm |
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Dimensions/Packaging: | Radial |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -25℃ ~ 85℃ (TA) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Test & Measurement, Maintenance & Repair, Communications & Networking, Audio, Sensing & Instrumentation, Consumer Electronics, Automation & Process Control Alternative material
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