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Model APT5010LVRG
Description 功率MOS ，V是新一代高压N沟道增强 Power MOS V is a new generation of high voltage N-Channel enhancement
Product QR code
Brand: Microsemi
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
97.8  yuan 97.8yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8023) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

500 V

 

Technical parameters/rated current:

47.0 A

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

520 W

 

Technical parameters/Input capacitance:

8.90 nF

 

Technical parameters/gate charge:

470 nC

 

Technical parameters/drain source voltage (Vds):

500 V

 

Technical parameters/Continuous drain current (Ids):

47.0 A

 

Technical parameters/rise time:

16 ns

 

Technical parameters/Input capacitance (Ciss):

7400pF @25V(Vds)

 

Technical parameters/descent time:

5 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

520000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Packaging:

TO-247-3

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
APT5010LVFRG APT5010LVFRG Microchip 完全替代 TO-264-3
Trans MOSFET N-CH 500V 47A 3Pin(3+Tab) TO-264
APT5010LVR APT5010LVR Microsemi 功能相似 TO-264
功率MOS ，V是新一代高压N沟道增强 Power MOS V is a new generation of high voltage N-Channel enhancement
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