Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 360 W |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/Continuous drain current (Ids): | 28A |
|
Technical parameters/rise time: | 43 ns |
|
Technical parameters/Input capacitance (Ciss): | 2890pF @25V(Vds) |
|
Technical parameters/descent time: | 56 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 360000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-247 |
|
Dimensions/Packaging: | TO-247 |
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Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APT5020BN
|
Microsemi | 功能相似 | TO-247 |
POWER MOS IV 500V 28A 0.2Ω / 500V 27A 0.22Ω
|
||
|
|
Advanced Power Technology | 功能相似 |
POWER MOS IV 500V 28A 0.2Ω / 500V 27A 0.22Ω
|
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|
|
Semelab | 功能相似 |
4TH GENERATION MOSFET
|
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