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Model PTFA043002E V1
Description 射频金属氧化物半导体场效应(RF MOSFET)晶体管 RFP-LDMOS GOLDMOS 8
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Brand: Infineon
Packaging H-30275-4
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5026) Minimum order quantity(1)
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Technical parameters/frequency:

800 MHz

 

Technical parameters/rated current:

10 µA

 

Technical parameters/dissipated power:

761 W

 

Technical parameters/output power:

100 W

 

Technical parameters/gain:

16 dB

 

Technical parameters/test current:

1.55 A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/rated voltage:

65 V

 

Package parameters/number of pins:

5

 

Encapsulation parameters/Encapsulation:

H-30275-4

 

Dimensions/Length:

41.15 mm

 

Dimensions/Width:

10.16 mm

 

Dimensions/Height:

4.55 mm

 

Dimensions/Packaging:

H-30275-4

 

Other/Product Lifecycle:

Obsolete

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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