Technical parameters/frequency: | 1.84 GHz |
|
Technical parameters/dissipated power: | 201000 mW |
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Technical parameters/output power: | 60 W |
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Technical parameters/gain: | 16.5 dB |
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Technical parameters/test current: | 550 mA |
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Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 201000 mW |
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Technical parameters/rated voltage: | 65 V |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | H-37265-2 |
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Dimensions/Height: | 3.56 mm |
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Dimensions/Packaging: | H-37265-2 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PTFA180701FV4R0XTMA1
|
Infineon | 类似代替 | H-37265-2 |
High Power RF LDMOS FET, 70W, 28V, 1805 – 1880MHz
|
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