Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @10mA, 5V |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SC-70-6 |
|
Dimensions/Length: | 2.2 mm |
|
Dimensions/Width: | 1.35 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SC-70-6 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Computers and computer peripherals, automation and process control, power management, industrial, automotive applications |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZB984-C3V3
|
NXP | 功能相似 | SOT-663 |
NXP BZB984-C3V3 二极管阵列 齐纳, 3.3 V, 双共阳极, 425 mW, -65 °C, 150 °C, SOT-663
|
||
BZB984-C3V3
|
Philips | 功能相似 |
NXP BZB984-C3V3 二极管阵列 齐纳, 3.3 V, 双共阳极, 425 mW, -65 °C, 150 °C, SOT-663
|
|||
BZB984-C3V3,115
|
NXP | 功能相似 | SOT-663 |
齐纳二极管 425mW，BZB984 系列，Nexperia ### 齐纳二极管，Nexperia
|
||
PUMD15
|
Nexperia | 功能相似 | UMT |
NXP PUMD15 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 30 hFE, SOT-363
|
||
PUMD15,115
|
Nexperia | 类似代替 | SC-70-6 |
PUMD15 Series 50 V 100 mA 表面贴装 NPN/PNP 配备电阻的晶体管 - SOT-363
|
||
PUMD15,115
|
NXP | 类似代替 | SC-88-6 |
PUMD15 Series 50 V 100 mA 表面贴装 NPN/PNP 配备电阻的晶体管 - SOT-363
|
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