Technical parameters/frequency: | 50 MHz |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 1.3 W |
|
Technical parameters/breakdown voltage (collector emitter): | 300 V |
|
Technical parameters/Maximum allowable collector current: | 0.2A |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-89 |
|
Dimensions/Packaging: | SOT-89 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC546
|
CJ | 功能相似 | TO-92-3 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC546
|
NXP | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC546
|
Diotec Semiconductor | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC546
|
Micro Electronics | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC546
|
ON Semiconductor | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC546
|
Weitron Technology | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC546
|
Philips | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC546
|
KEC | 功能相似 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
ZTX614
|
Diodes | 功能相似 | E-Line-3 |
ZTX614 系列 100 V 0.8 A NPN 硅 平面 中等功率 达林顿晶体管
|
||
ZTX614
|
Diodes Zetex | 功能相似 |
ZTX614 系列 100 V 0.8 A NPN 硅 平面 中等功率 达林顿晶体管
|
|||
|
|
Zetex | 功能相似 | TO-92 |
ZTX614 系列 100 V 0.8 A NPN 硅 平面 中等功率 达林顿晶体管
|
||
ZTX614
|
Fairchild | 功能相似 | TO-226-3 |
ZTX614 系列 100 V 0.8 A NPN 硅 平面 中等功率 达林顿晶体管
|
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