Technical parameters/dissipated power: | 10000 mW |
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Technical parameters/minimum current amplification factor (hFE): | 60 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223-4 |
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Dimensions/Packaging: | SOT-223-4 |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PZT3904
|
ST Microelectronics | 功能相似 | SOT-223-4 |
ON Semiconductor PZT3904 , NPN 晶体管, 200 mA, Vce=40 V, HFE:30, 300 MHz, 3 + Tab引脚 SOT-223封装
|
||
|
|
Secos | 功能相似 |
ON Semiconductor PZT3904 , NPN 晶体管, 200 mA, Vce=40 V, HFE:30, 300 MHz, 3 + Tab引脚 SOT-223封装
|
|||
PZT3904
|
Infineon | 功能相似 | SOT-223 |
ON Semiconductor PZT3904 , NPN 晶体管, 200 mA, Vce=40 V, HFE:30, 300 MHz, 3 + Tab引脚 SOT-223封装
|
||
PZT3904
|
Philips | 功能相似 |
ON Semiconductor PZT3904 , NPN 晶体管, 200 mA, Vce=40 V, HFE:30, 300 MHz, 3 + Tab引脚 SOT-223封装
|
|||
PZT3904
|
NXP | 功能相似 | SOT-223 |
ON Semiconductor PZT3904 , NPN 晶体管, 200 mA, Vce=40 V, HFE:30, 300 MHz, 3 + Tab引脚 SOT-223封装
|
||
|
|
Infineon | 功能相似 | SOT-223 |
SOT-223 NPN 40V 0.2A
|
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PZT3904T1
|
ON Semiconductor | 功能相似 | SOT-223-4 |
通用晶体管 General Purpose Transistor
|
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PZT3904T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR PZT3904T1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1.5 W, 200 mA, 100 hFE
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