Technical parameters/rated voltage (DC): | 200 V |
|
Technical parameters/rated current: | 20.0 A |
|
Technical parameters/forward voltage (Max): | 900mV @10A |
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Technical parameters/forward current (Max): | 20 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263 |
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Dimensions/Length: | 10.29 mm |
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Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYW29ED-200,118
|
NXP | 功能相似 | TO-252-3 |
Diode Switching 200V 8A 3Pin(2+Tab) DPAK T/R
|
||
BYW29ED-200,118
|
We En Semiconductor | 功能相似 | TO-252-3 |
Diode Switching 200V 8A 3Pin(2+Tab) DPAK T/R
|
||
|
|
Motorola | 类似代替 |
ON SEMICONDUCTOR MBRB20200CTT4G 肖特基整流器, 双共阴极, 200 V, 20 A, TO-263, 3 引脚, 1 V
|
|||
MBRB20200CTT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
ON SEMICONDUCTOR MBRB20200CTT4G 肖特基整流器, 双共阴极, 200 V, 20 A, TO-263, 3 引脚, 1 V
|
||
MURB1620CTG
|
ON Semiconductor | 类似代替 | TO-263-3 |
10A 至 30A,ON Semiconductor ### 标准 Products with NSV- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified. ### 二极管和整流器,ON Semiconductor
|
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