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Model MRF586
Description 射频与微波离散小功率三极管 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Brand: Microsemi
Packaging TO-205
Delivery time
Packaging method Bulk
Standard packaging quantity 1
38.54  yuan 38.54yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8425) Minimum order quantity(1)
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Technical parameters/frequency:

3000 MHz

 

Technical parameters/dissipated power:

1 W

 

Technical parameters/breakdown voltage (collector emitter):

17 V

 

Technical parameters/gain:

13.5 dB

 

Technical parameters/minimum current amplification factor (hFE):

40 @50mA, 5V

 

Technical parameters/rated power (Max):

1 W

 

Technical parameters/dissipated power (Max):

1000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-205

 

Dimensions/Height:

6.6 mm

 

Dimensions/Packaging:

TO-205

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BFG35,115 BFG35,115 NXP 功能相似 TO-261-4
NXP BFG35,115 晶体管 双极-射频, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70 hFE
PDF
BFQ19 BFQ19 NXP 功能相似 SOT-89
NXP BFQ19 晶体管 双极-射频, NPN, 15 V, 5.5 GHz, 1 W, 100 mA, 80 hFE
PDF

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