Technical parameters/rated current: | 7.30 A |
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Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.023 Ω |
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Technical parameters/polarity: | N-Channel, P-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/product series: | IRF7389 |
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Technical parameters/threshold voltage: | 1 V |
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Technical parameters/Input capacitance: | 710 pF |
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Technical parameters/gate charge: | 34.0 nC |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/Continuous drain current (Ids): | 7.30 A |
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Technical parameters/thermal resistance: | 50℃/W (RθJA) |
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Technical parameters/Input capacitance (Ciss): | 650pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/working junction temperature (Max): | 150 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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