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Model RFD3055
Description MOSFET N-CH 60V 12A IPAK
Product QR code
Brand: ON Semiconductor
Packaging TO-251-3
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2396) Minimum order quantity(1)
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Technical parameters/dissipated power:

53W (Tc)

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Input capacitance (Ciss):

300pF @25V(Vds)

 

Technical parameters/dissipated power (Max):

53W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-251-3

 

Dimensions/Packaging:

TO-251-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RFD3055 RFD3055 ON Semiconductor 功能相似 TO-251-3
11A ， 60V ， 0.107欧姆，逻辑电平， N沟道功率MOSFET 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
PDF
RFD3055 RFD3055 Harris 功能相似 I-PAK
11A ， 60V ， 0.107欧姆，逻辑电平， N沟道功率MOSFET 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
PDF
RFD3055LE RFD3055LE Fairchild 功能相似 TO-251-3
RFD3055LE 管装
PDF
RFD3055LE RFD3055LE ON Semiconductor 功能相似 TO-251-3
RFD3055LE 管装
PDF

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