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Model IPL60R385CPAUMA1

Description INFINEON IPL60R385CPAUMA1 功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V

Brand: Infineon

Packaging VSON

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	83 W
Technical parameters/number of pins:	5
Technical parameters/drain source resistance:	0.35 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	83 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	650 V
Technical parameters/Continuous drain current (Ids):	9A
Technical parameters/rise time:	5 ns
Technical parameters/Input capacitance (Ciss):	790pF @100V(Vds)
Technical parameters/descent time:	5 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Technical parameters/dissipated power (Max):	83 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	5
Encapsulation parameters/Encapsulation:	VSON
Dimensions/Length:	8.1 mm
Dimensions/Width:	8.1 mm
Dimensions/Height:	1.1 mm
Dimensions/Packaging:	VSON
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Communication and Networking, Consumer Electronics, Power Management, Consumer Electronics, Communications& Networking
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17