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Model RHU002N06FRAT106
Description ROHM RHU002N06FRAT106 晶体管, MOSFET, AEC-Q101, N沟道, 200 mA, 60 V, 1.7 ohm, 10 V, 2.5 V
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Brand: ROHM Semiconductor
Packaging SOT-323
Delivery time
Packaging method
Standard packaging quantity 1
0.2  yuan 0.2yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3785) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

1.7 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

200 mW

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/rise time:

5 ns

 

Technical parameters/descent time:

95 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-323

 

Dimensions/Packaging:

SOT-323

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Manufacturing Applications:

Automotive, Automotive

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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