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Model RJH65D27BDPQ-A0#T2
Description IGBT 分立，Renesas Electronics ### IGBT（绝缘栅双极型晶体管）分立和模块 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
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Brand: Renesas Electronics
Packaging TO-247-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
35.62  yuan 35.62yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1457) Minimum order quantity(1)
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Technical parameters/dissipated power:

375 W

 

Technical parameters/breakdown voltage (collector emitter):

650 V

 

Technical parameters/reverse recovery time:

80 ns

 

Technical parameters/rated power (Max):

375 W

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

375 W

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Length:

15.94 mm

 

Dimensions/Width:

5.02 mm

 

Dimensions/Height:

21.13 mm

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Rail, Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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