Technical parameters/rated voltage (DC): | -30.0 V |
|
Technical parameters/rated current: | -5.30 A |
|
Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.50 W |
|
Technical parameters/product series: | IRF7205 |
|
Technical parameters/drain source voltage (Vds): | -30.0 V |
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Technical parameters/Leakage source breakdown voltage: | -30.0 V |
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Technical parameters/Continuous drain current (Ids): | -4.60 A |
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Technical parameters/rise time: | 21 ns |
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Technical parameters/Input capacitance (Ciss): | 870pF @10V(Vds) |
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Technical parameters/descent time: | 71 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7205TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7205TRPBF 场效应管, MOSFET
|
||
IRF7205TRPBF
|
IFC | 类似代替 |
INFINEON IRF7205TRPBF 场效应管, MOSFET
|
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