Technical parameters/forward voltage: | 1.2V @9A |
|
Technical parameters/reverse recovery time: | 2000 ns |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 1000V |
|
Technical parameters/forward current: | 30 A |
|
Technical parameters/Maximum forward surge current (Ifsm): | 150 A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Chassis |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | G-52 |
|
Dimensions/Height: | 10.2 mm |
|
Dimensions/Packaging: | G-52 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semtech Corporation | 完全替代 | G-52 |
G-52 1000V 30A
|
||
T1212
|
Pulse Electronics | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 30A, 1000V V(RRM), Silicon,
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review