Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/Input capacitance (Ciss): | 3.1pF @2V(Vds) |
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Technical parameters/rated power (Max): | 30 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SMD-3 |
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Dimensions/Length: | 0.6 mm |
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Dimensions/Width: | 0.8 mm |
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Dimensions/Height: | 0.27 mm |
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Dimensions/Packaging: | SMD-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Sanyo Semiconductor | 功能相似 | 3 |
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, 1 X 0.60 MM, 0.27 MM HEIGHT, ULTRA SMALL, MINIATURE, USFP, 3 PIN
|
||
TF252-5-TL-H
|
ON Semiconductor | 完全替代 | SMD-3 |
N 通道 JFET,ON Semiconductor ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
|
||
|
|
Sanyo Semiconductor | 完全替代 | SMD-3 |
N 通道 JFET,ON Semiconductor ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
|
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