Technical parameters/frequency: | 215 MHz |
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Technical parameters/rated voltage (DC): | 50.0 V |
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Technical parameters/rated current: | 2.00 A |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 0.9 W |
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Technical parameters/gain bandwidth product: | 215 MHz |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 1A |
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Technical parameters/minimum current amplification factor (hFE): | 200 @500mA, 2V |
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Technical parameters/maximum current amplification factor (hFE): | 200 @10mA, 2V |
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Technical parameters/rated power (Max): | 1.1 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 1700 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-23-6 |
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Dimensions/Length: | 3.1 mm |
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Dimensions/Width: | 1.8 mm |
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Dimensions/Height: | 1.3 mm |
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Dimensions/Packaging: | SOT-23-6 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXTD09N50DE6TC
|
Diodes | 类似代替 | SOT-23-6 |
双极晶体管 - 双极结型晶体管(BJT) Dual 50V NPN
|
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