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Model TIP41B

Description 互补硅塑料功率晶体管 Complementary Silicon Plastic Power Transistors

Brand: ON Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	80.0 V
Technical parameters/rated current:	6.00 A
Technical parameters/dissipated power:	65 W
Technical parameters/gain bandwidth product:	3 MHz
Technical parameters/breakdown voltage (collector emitter):	80 V
Technical parameters/minimum current amplification factor (hFE):	15 @3A, 4V
Technical parameters/rated power (Max):	2 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	65 ℃
Technical parameters/dissipated power (Max):	2000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.28 mm
Dimensions/Width:	4.82 mm
Dimensions/Height:	9.28 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-65℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead

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