Technical parameters/power supply voltage (DC): | 16.0 V |
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Technical parameters/output current: | ≤30 mA |
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Technical parameters/power supply current: | 57 µA |
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Technical parameters/number of circuits: | 4 |
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Technical parameters/number of channels: | 4 |
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Technical parameters/dissipated power: | 0.95 W |
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Technical parameters/Common Mode Rejection Ratio: | 65 dB |
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Technical parameters/input compensation drift: | 1.10 µV/K |
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Technical parameters/bandwidth: | 85 kHz |
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Technical parameters/conversion rate: | 30.0 mV/μs |
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Technical parameters/gain bandwidth product: | 110 kHz |
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Technical parameters/input compensation voltage: | 900 µV |
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Technical parameters/input bias current: | 0.7 pA |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/gain bandwidth: | 0.085 MHz |
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Technical parameters/dissipated power (Max): | 950 mW |
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Technical parameters/Common Mode Rejection Ratio (Min): | 65 dB |
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Technical parameters/power supply voltage: | 4V ~ 16V |
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Technical parameters/power supply voltage (Max): | 16 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 14 |
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Encapsulation parameters/Encapsulation: | SOIC-14 |
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Dimensions/Packaging: | SOIC-14 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: Alternative material
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