Technical parameters/tolerances: | ±5 % |
|
Technical parameters/dissipated power: | 1000 mW |
|
Technical parameters/test current: | 10 mA |
|
Technical parameters/voltage regulation value: | 43 V |
|
Technical parameters/rated power (Max): | 1 W |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/dissipated power (Max): | 1000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-213AB |
|
Dimensions/Length: | 5.2 mm |
|
Dimensions/Packaging: | DO-213AB |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZM4755A-GS08
|
Vishay Siliconix | 类似代替 | 2 |
1W，ZM47xxA 系列，Vishay Semiconductor 硅平面齐纳二极管（电源） 适用于稳定和削波电路的应用，带有高额定功率 标准齐纳电压容差为 ±5% 符合 AEC-Q101 ### 齐纳二极管，Vishay Semiconductor
|
||
ZM4755A-GS08
|
VISHAY | 类似代替 | DO-213AB |
1W，ZM47xxA 系列，Vishay Semiconductor 硅平面齐纳二极管（电源） 适用于稳定和削波电路的应用，带有高额定功率 标准齐纳电压容差为 ±5% 符合 AEC-Q101 ### 齐纳二极管，Vishay Semiconductor
|
||
|
|
Vishay Intertechnology | 类似代替 | DO-41 |
1W，ZM47xxA 系列，Vishay Semiconductor 硅平面齐纳二极管（电源） 适用于稳定和削波电路的应用，带有高额定功率 标准齐纳电压容差为 ±5% 符合 AEC-Q101 ### 齐纳二极管，Vishay Semiconductor
|
||
ZM4755A-GS08
|
Vishay Semiconductor | 类似代替 | DO-213AB |
1W，ZM47xxA 系列，Vishay Semiconductor 硅平面齐纳二极管（电源） 适用于稳定和削波电路的应用，带有高额定功率 标准齐纳电压容差为 ±5% 符合 AEC-Q101 ### 齐纳二极管，Vishay Semiconductor
|
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