Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 1.00 A |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 1000 mW |
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Technical parameters/breakdown voltage (collector emitter): | 30 V |
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Technical parameters/Maximum allowable collector current: | 1A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @500mA, 2V |
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Technical parameters/rated power (Max): | 1 W |
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Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 200℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSW01G
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON SEMICONDUCTOR MPSW01G 功率晶体管, NPN
|
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