Technical parameters/rated voltage (DC): | -60.0 V |
|
Technical parameters/rated current: | -450 mA |
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Technical parameters/drain source resistance: | 5.00 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2W (Ta) |
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Technical parameters/Input capacitance: | 100 pF |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 450 mA |
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Technical parameters/rise time: | 15.0 ns |
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Technical parameters/Input capacitance (Ciss): | 100pF @18V(Vds) |
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Technical parameters/dissipated power (Max): | 2W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape, Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZVP2106G
|
Diodes | 功能相似 | SOT-223 |
DIODES INC. ZVP2106G 晶体管, MOSFET, P沟道, 450 mA, -60 V, 5 ohm, -10 V, -3.5 V
|
||
ZVP2106GTA
|
Diodes Zetex | 功能相似 | SOT-223 |
P沟道 60V 450mA
|
||
ZVP2106GTA
|
Zetex | 功能相似 | SOT-223 |
P沟道 60V 450mA
|
||
ZVP2106GTA
|
Diodes | 功能相似 | TO-261-4 |
P沟道 60V 450mA
|
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