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Model ZXMN3B04N8TA
Description 场效应管(MOSFET) ZXMN3B04N8TA SO-8
Product QR code
Brand: Diodes
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.96  yuan 2.96yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6807) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

7.60 A

 

Technical parameters/number of channels:

1

 

Technical parameters/drain source resistance:

25 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30 V

 

Technical parameters/breakdown voltage of gate source:

±12.0 V

 

Technical parameters/Continuous drain current (Ids):

8.90 A

 

Technical parameters/rise time:

11.5 ns

 

Technical parameters/Input capacitance (Ciss):

2480pF @15V(Vds)

 

Technical parameters/rated power (Max):

2 W

 

Technical parameters/descent time:

16.6 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

2W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

5 mm

 

Dimensions/Width:

4 mm

 

Dimensions/Height:

1.5 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
ZXMN3B04N8TC ZXMN3B04N8TC Diodes 类似代替 SO-8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
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