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Model ZXMD63C02XTA
Description ZXMD63C02X 系列 20 V 0.13 Ohm N/P 沟道 双 增强模式 MOSFET-MSOP-8
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Brand: Diodes
Packaging MSOP-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.33  yuan 2.33yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1819) Minimum order quantity(1)
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Technical parameters/drain source resistance:

150 mΩ

 

Technical parameters/polarity:

N-Channel, P-Channel

 

Technical parameters/dissipated power:

1.25 W

 

Technical parameters/Input capacitance:

290 pF

 

Technical parameters/gate charge:

5.25 nC

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Leakage source breakdown voltage:

20.0 V

 

Technical parameters/breakdown voltage of gate source:

±12.0 V

 

Technical parameters/Continuous drain current (Ids):

2.40 A

 

Technical parameters/rise time:

9.60 ns

 

Technical parameters/Input capacitance (Ciss):

350pF @15V(Vds)

 

Technical parameters/rated power (Max):

1.04 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1250 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

MSOP-8

 

Dimensions/Packaging:

MSOP-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
ZXMD63C02X ZXMD63C02X Diodes 功能相似 MSOP
Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.7/-2.4A; 1.25W; MSOP8
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