Technical parameters/rated current: | 10.0 mA |
|
Technical parameters/drain source resistance: | 2.00 kΩ |
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Technical parameters/polarity: | N-Channel, Dual N-Channel |
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Technical parameters/dissipated power: | 500 mW |
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Technical parameters/breakdown voltage of gate source: | -25.0 V |
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Technical parameters/Continuous drain current (Ids): | 60.0 mA |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 7 |
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Encapsulation parameters/Encapsulation: | TO-78 |
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Dimensions/Packaging: | TO-78 |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Semiconductor | 功能相似 | TO-78 |
Dual N-Channel Silicon Junction Field-Effect Transistor
|
||
U431
|
InterFET | 功能相似 |
Dual N-Channel Silicon Junction Field-Effect Transistor
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|||
U431
|
Solitron Devices | 功能相似 | DIE |
Dual N-Channel Silicon Junction Field-Effect Transistor
|
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