Technical parameters/drain source resistance: | 24.0 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 100 W |
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Technical parameters/drain source voltage (Vds): | -40.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 50.0 A |
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Technical parameters/rise time: | 380 ns |
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Technical parameters/descent time: | 140 ns |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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