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Model SUB85N03-07P
Description N通道30 -V （D -S ） 175C MOSFET N-Channel 30-V (D-S) 175C MOSFET
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Brand: Vishay Semiconductor
Packaging TO-263
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9042) Minimum order quantity(1)
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Technical parameters/drain source resistance:

7.00 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.75 W

 

Technical parameters/Leakage source breakdown voltage:

30.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

85.0 A

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263

 

Dimensions/Packaging:

TO-263

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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