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Model SI4874DY
Description N沟道30 V MOSFET N-Channel 30-V MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging SO
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9415) Minimum order quantity(1)
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Technical parameters/forward voltage:

730 mV

 

Technical parameters/drain source resistance:

7.50 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.10 W

 

Technical parameters/Leakage source breakdown voltage:

30.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

-15.0 A to 15.0 A

 

Technical parameters/rise time:

16.0 ns

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO

 

Dimensions/Packaging:

SO

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4874DY SI4874DY Vishay Semiconductor 功能相似 SO
MOSFET 30V 15A 3.1W
SI4874DY SI4874DY Fairchild 功能相似 SO-8
MOSFET 30V 15A 3.1W
PDF
SI4874DY-T1 SI4874DY-T1 Vishay Semiconductor 功能相似 SO
Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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