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Model SUP65P06-20
Description P通道60 - V（D -S）， 175℃下的MOSFET P-Channel 60-V (D-S), 175C MOSFET
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Brand: Vishay Semiconductor
Packaging TO-220
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8210) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-60.0 V

 

Technical parameters/rated power:

250 W

 

Technical parameters/drain source resistance:

20.0 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

250 W

 

Technical parameters/Leakage source breakdown voltage:

-60.0 V (min)

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

-65.0 A

 

Technical parameters/rise time:

40.0 ns

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220

 

Dimensions/Packaging:

TO-220

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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