Technical parameters/drain source resistance: | 75.0 mΩ |
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Technical parameters/polarity: | N-Channel, P-Channel |
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Technical parameters/dissipated power: | 1.10 W |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/breakdown voltage of gate source: | ±12.0 V |
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Technical parameters/Continuous drain current (Ids): | 4.20 A |
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Package parameters/number of pins: | 8 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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