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Model SI3430DV-T1
Description N沟道100 -V （D -S ）的MOSFET N-Channel 100-V (D-S) MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging TSOP
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6435) Minimum order quantity(1)
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Technical parameters/drain source resistance:

170 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.14 W

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

2.40 A

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

TSOP

 

Dimensions/Packaging:

TSOP

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3430DV-T1-E3 SI3430DV-T1-E3 Vishay Intertechnology 功能相似
MOSFET N-CH 100V 1.8A 6-TSOP
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SI3430DV-T1-E3 SI3430DV-T1-E3 VISHAY 功能相似 TSOP-6
MOSFET N-CH 100V 1.8A 6-TSOP
PDF
SI3430DV-T1-GE3 SI3430DV-T1-GE3 Vishay Semiconductor 功能相似 TSOP-6
Trans MOSFET N-CH 100V 1.8A 6Pin TSOP T/R
PDF

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