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Model SI5445DC-T1
Description P沟道1.8 -V （G -S ）的MOSFET P-Channel 1.8-V (G-S) MOSFET
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Brand: Vishay Semiconductor
Packaging 1206
Delivery time
Packaging method
Standard packaging quantity 1
1.23  yuan 1.23yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2364) Minimum order quantity(1)
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Technical parameters/drain source resistance:

35.0 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.30 W

 

Technical parameters/breakdown voltage of gate source:

±8.00 V

 

Technical parameters/Continuous drain current (Ids):

-5.20 A to 5.20 A

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation (metric):

3216

 

Encapsulation parameters/Encapsulation:

1206

 

Dimensions/Length:

3.2 mm

 

Dimensions/Width:

1.6 mm

 

Dimensions/Packaging (Metric):

3216

 

Dimensions/Packaging:

1206

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI5445DC SI5445DC Vishay Siliconix 功能相似
P-Channel 1.8V (G-S) MOSFET
PDF
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MOSFET 12V 6A 6.3W
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SI5475BDC-T1-E3 SI5475BDC-T1-E3 Vishay Semiconductor 功能相似 1206
MOSFET 12V 6A 6.3W
PDF

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