Technical parameters/drain source resistance: | 53.0 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.00 W |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SO |
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Dimensions/Packaging: | SO |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Vishay Intertechnology | 功能相似 |
双P沟道增强型MOSFET Dual P-Channel Enhancement Mode MOSFET
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