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Model SI3552DV-T1
Description N和P通道30 - V（D -S）的MOSFET N- and P-Channel 30-V (D-S) MOSFET
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Brand: Vishay Semiconductor
Packaging TSOP
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4820) Minimum order quantity(1)
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Technical parameters/drain source resistance:

105 mΩ

 

Technical parameters/polarity:

N-Channel, P-Channel

 

Technical parameters/dissipated power:

1.15 W

 

Technical parameters/drain source voltage (Vds):

30.0 V

 

Technical parameters/Leakage source breakdown voltage:

±30.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

51.0 A

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

TSOP

 

Dimensions/Packaging:

TSOP

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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