Technical parameters/drain source resistance: | 25.0 mΩ |
|
Technical parameters/polarity: | Dual N-Channel |
|
Technical parameters/dissipated power: | 1.30 W |
|
Technical parameters/drain source voltage (Vds): | 20.0 V |
|
Technical parameters/Leakage source breakdown voltage: | 20.0 V |
|
Technical parameters/breakdown voltage of gate source: | ±8.00 V |
|
Technical parameters/Continuous drain current (Ids): | 7.70 A |
|
Package parameters/number of pins: | 8 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7904BDN-T1-E3
|
Vishay Siliconix | 功能相似 | 1212-8 |
MOSFET 2N-CH 20V 6A 1212-8
|
||
SI7904BDN-T1-E3
|
VISHAY | 功能相似 | PowerPAK-1212-8 |
MOSFET 2N-CH 20V 6A 1212-8
|
||
SI7904BDN-T1-GE3
|
Vishay Siliconix | 功能相似 | 1212-8 |
Trans MOSFET N-CH 20V 6A 8Pin PowerPAK 1212 T/R
|
||
SI7904DN-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET 20V 7.7A 2.8W 30mohm @ 4.5V
|
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