Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 32 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Continuous drain current (Ids): | 13.8A |
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Technical parameters/rise time: | 11 ns |
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Technical parameters/Input capacitance (Ciss): | 950pF @100V(Vds) |
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Technical parameters/rated power (Max): | 32 W |
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Technical parameters/descent time: | 12 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 32W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.65 mm |
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Dimensions/Width: | 4.9 mm |
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Dimensions/Height: | 16.15 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPA15N60C3
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Infineon | 类似代替 | TO-220-3 |
INFINEON SPA15N60C3 功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.25 ohm, 10 V, 3 V
|
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