Technical parameters/rated voltage (DC): | 30.0 V |
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Technical parameters/rated current: | 154 mA |
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Technical parameters/drain source resistance: | 2.30 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 300 mW |
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Technical parameters/Input capacitance: | 11.5 pF |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/breakdown voltage of gate source: | ±10.0 V |
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Technical parameters/Continuous drain current (Ids): | 154 mA |
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Technical parameters/Input capacitance (Ciss): | 20pF @5V(Vds) |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-416 |
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Dimensions/Packaging: | SOT-416 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTA7002NT1G
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ON Semiconductor | 功能相似 | SC-75-3 |
ON SEMICONDUCTOR NTA7002NT1G MOSFET Transistor, N Channel, 154 mA, 30 V, 1.4 ohm, 4.5 V, 1 V 新
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